Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2898719
Keywords
-
Categories
Ask authors/readers for more resources
The improvement in the phase change characteristics of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with SiO2 using cosputtering at room temperature. As the sputtering power of SiO2 increased from 0 to 150 W, the activation energy for crystallization increased from 2.1 +/- 0.2 to 3.1 +/- 0.15 eV. SiO2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of SiO2, which reduced the power consumption as well as the reset current. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available