Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2905816
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Funding
- EPSRC [EP/D001536/1, EP/G005176/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D000661/1, EP/G005176/1, EP/D001536/1] Funding Source: researchfish
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Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.
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