Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2976676
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- NIST Office of Microelectronics Programs
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The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al(2)O(3)/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al(2)O(3) and sulfur-passivated GaAs interface is found to be 3.0 +/- 0.1 eV whereas for the unpassivated or NH(4)OH-treated GaAs is 3.6 eV. At the Al/Al(2)O(3) interface, all samples yield the same barrier height of 2.9 +/- 0.2 eV. With a band gap of 6.4 +/- 0.05 eV for Al(2)O(3), the band alignments at both Al(2)O(3) interfaces are established. (C) 2008 American Institute of Physics.
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