Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2973209
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Funding
- National Natural Science Foundation of China [50341032, 50425102, 50601021, 50701038, 60776014]
- Zhejiang University-Helmholtz Cooperation Fund
- Ministry of Education of China
- Department of Science and Technology of Zhejiang province
- Zhejiang University
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Stable configurations, electronic structures, and magnetic behaviors for N, O, and F absorptions on graphene have been investigated by first-principles calculations. It is found that F atom is located just above the C atom, while both O and N atoms are located above the carbon-carbon bond. Strong interactions between absorbers and C atoms exist. N adatom has an unsaturated electron and its electrons are polarized, inducing 0.84 mu(B) magnetic moment per N atom for graphene, while both F and O adatoms do not have polarized electrons, which results in no net magnetic moment. Possible mechanisms were discussed for different magnetic behaviors of graphene absorbed with N, O, and F atoms. We find that the p-type doping of graphene by N atom can result in strongly spin-polarized impurity states, which may lead to a possible pathway to high temperature magnetic order in graphene. (C) 2008 American Institute of Physics.
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