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APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2961007
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We report on the epitaxial growth of ultrathin ferromagnetic Fe1.7Ge layers on Ge(111) wafer. These single crystal intermetallic layers adopt the InNi2 (B8(2)) crystallographic structure. They are ferromagnetic with a Curie temperature well above room temperature. The interface between the ferromagnet layer and the Ge wafer is of high perfection. Interestingly, the annealing of the sample up to 300 degrees C alters neither the crystallographic structure, nor the interface quality, nor the magnetic properties but leads to a nearly perfect smoothening of the germanide layer surface. This high thermal robustness should open the way for the growth of fully epitaxial iron germanide/Ge hybrid structures. (C) 2008 American Institute of Physics.
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