Related references
Note: Only part of the references are listed.Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si
Kuo-Chang Lu et al.
APPLIED PHYSICS LETTERS (2007)
Improved carrier injection in ultrathin-body SOI Schottky-barrier MOSFETs
M. Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2007)
High-performance fully depleted silicon-nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices
N. Singh et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Overview and status of metal S/D Schottky-barrier MOSFET technology
JM Larson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Characterization of erbium-silicided Schottky diode junction
M Jang et al.
IEEE ELECTRON DEVICE LETTERS (2005)
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
SY Zhu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance
D Connelly et al.
IEEE ELECTRON DEVICE LETTERS (2003)
NiSi salicide technology for scaled CMOS
H Iwai et al.
MICROELECTRONIC ENGINEERING (2002)
Share Paper
