Related references
Note: Only part of the references are listed.Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)
J. M. Hartmann et al.
THIN SOLID FILMS (2008)
Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates
J. Parsons et al.
APPLIED PHYSICS LETTERS (2007)
Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)
Minjoo L. Lee et al.
THIN SOLID FILMS (2006)
The crystallographic properties of strained silicon measured by X-ray diffraction
M Erdtmann et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2006)
Film thickness constraints for manufacturable strained silicon CMOS
JG Fiorenza et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure
N Sugii
JOURNAL OF APPLIED PHYSICS (2001)
Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
J Yang et al.
APPLIED PHYSICS LETTERS (2000)