Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2970106
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Funding
- IBM beamline X20C [DE-AC02-98CH-10886]
- NSLS, Brookhaven National Laboratory
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We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 degrees C, at about 350 degrees C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device. (c) 2008 American Institute of Physics.
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