Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2976559
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [C09]
- New Energy and Industrial Technology Development Organization, Japan [04A48511d]
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Nonpolar AlN layers were grown on 4H-SiC (1 (1) over bar 00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1 (1) over bar 00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1 x 10(6) cm(-1). (C) 2008 American Institute of Physics.
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