Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2900711
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ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/Zn0.9Mg0.1O/ZnO/Zn0.9Mg0.1O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing. (c) 2008 American Institute of Physics.
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