Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2959732
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Fullerene C-60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 mu m. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm(2)/V s. The mobility of 3.23 cm(2)/V s was obtained from the TFT with a channel length of 5 mu m and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance. (C) 2008 American Institute of Physics.
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