Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2840176
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Deep ultraviolet photoluminescence (PL) was employed to probe the valence band structure of AlN epilayers grown by metal organic chemical vapor deposition on c-plane sapphire substrates. At 10 K, in addition to the dominant emission peak at 6.050 eV polarized in the E parallel to c direction, we observed two additional emission peaks at 6.249 and 6.262 eV polarized in the E perpendicular to c direction. These two emission lines are assigned to the recombination of free excitons related to the B and C valence bands. A more comprehensive picture of the valence band structure of AlN is thus directly obtained from the PL measurements.
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