Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2883932
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- National Research Foundation of Korea [과C6B1912] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated spatial light emission from a periodic inverted polygonal deflector, which included six {10-1-1} facets and six {11-2-2} facets embedded in an InGaN/GaN light emitting diode by using confocal scanning electroluminescence microscopy. We found a noticeable crown shape with the contrast of luminescence intensity and wavelength observed on these facets mainly due to the variation of growth rate for the InGaN quantum wells. In addition, a very low intensity and blueshifted emission wavelength on the {11-2-2} facets indicated the deficiency of indium incorporation and/or much thinner well thickness as compared to that of the {10-1-1} facets. (c) 2008 American Institute of Physics.
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