Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2841710
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- EPSRC [EP/F001630/1] Funding Source: UKRI
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The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. Here, we demonstrate the possibility of conformally coating carbon nanotubes with high-dielectric oxide as a first step toward ultrahigh integration density of three-dimensional ferroelectric random access memories. (C) 2008 American Institute of Physics.
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