Related references
Note: Only part of the references are listed.Dimensional transition of CdxZn1-xTe nanostructures grown on ZnTe layers
H. S. Lee et al.
APPLIED PHYSICS LETTERS (2007)
Role of defects in transport through a quantum dot single electron transistor
K. P. Singh et al.
JOURNAL OF APPLIED PHYSICS (2006)
Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
HY Liu et al.
JOURNAL OF APPLIED PHYSICS (2006)
Red light-emitting diodes based on InP/GaP quantum dots
F Hatami et al.
JOURNAL OF APPLIED PHYSICS (2005)
Optical properties of InAs/GaAs surface quantum dots
ZL Miao et al.
APPLIED PHYSICS LETTERS (2005)
1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition
MT Todaro et al.
APPLIED PHYSICS LETTERS (2004)
High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
J Jiang et al.
APPLIED PHYSICS LETTERS (2004)
Optical properties of InP/GaInP quantum-dot laser structures
GM Lewis et al.
APPLIED PHYSICS LETTERS (2004)
Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures
HS Lee et al.
APPLIED PHYSICS LETTERS (2004)
Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
TR Nielsen et al.
PHYSICAL REVIEW B (2004)
Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots -: art. no. 125303
MKJ Johansson et al.
PHYSICAL REVIEW B (2003)
InAs/GaAs quantum dot intermixing induced by proton implantation
YL Ji et al.
JOURNAL OF APPLIED PHYSICS (2003)
InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers
ZM Ye et al.
JOURNAL OF APPLIED PHYSICS (2002)
Enhancement of the activation energy in coupled CdTe/ZnTe quantum dots and quantum-well structures with a ZnTe thin separation barrier
HS Lee et al.
APPLIED PHYSICS LETTERS (2002)
Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
F Ferdos et al.
APPLIED PHYSICS LETTERS (2002)
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
J Brault et al.
JOURNAL OF APPLIED PHYSICS (2002)
Zero-dimensional excitons in CdTe/ZnTe nanostructures
L Marsal et al.
JOURNAL OF APPLIED PHYSICS (2002)
GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors
K Kawasaki et al.
APPLIED PHYSICS LETTERS (2001)