Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2838350
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The Pt/TiO(x)/Pt trilayer with electrically asymmetrical interface have been synthesized by means of the reactive sputtering technique followed by the oxygen annealing. The initial current-voltage characteristics in the Pt/TiO(x)/Pt trilayer cell have rectifying behavior originated from the Schottky junction formed between TiO(x) and Pt top electrode layer. The series connection of Pt/TiO(x)/Pt trilayer cells brings about the control of the reset and set voltages depending on the resistance of the connected Schottky diode, which is the demonstration of the resistance switching in the resistance random access memory with the one diode and one resistance structure using Schottky barrier diode. (C) 2008 American Institute of Physics.
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