Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 23, Pages 5586-5588Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1832734
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Nonradiative photoluminescence (PL) lifetime (tau(nr)) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo , Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer tau(nr) of 105 ps at room temperature. (C) 2004 American Institute of Physics.
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