Dual-source chemical vapour deposition of titanium sulfide thin films from tetrakisdimethylamidotitanium and sulfur precursors

The dual-source atmospheric pressure chemical vapour deposition (APCVD) of TiS2 thin films from [Ti(NMe2)(4)] and (BuSH)-S-t is presented. Deposition took place at low temperatures (175-500degreesC) and nitrogen and carbon contamination of the films was negligible. The APCVD reaction of [Ti(NMe2)4] and (Bu2S2)-S-t resulted in the formation of a TiS2 film at 600degreesC but at 300-550degreesC films with a Ti:S ratio of 1:1 by EDXA were produced. In contrast, films produced from [Ti(NMe2)(4)] and S(SiMe3)(2) at 350-600degreesC contained little sulfur (TiS0.1-0.3) but large amounts of nitrogen and carbon indicating that titanium carbonitride (TiC0.5N0.5) had formed. The films were characterised by EDXA, SEM, XPS and Raman spectroscopy.