4.6 Article

Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 21, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3021359

Keywords

chemical vapour deposition; electron-hole recombination; elemental semiconductors; energy gap; exchange interactions (electron); phonons; photoluminescence; semiconductor quantum wires; silicon; silicon compounds; solid-state plasma; surface states

Ask authors/readers for more resources

We study by low temperature photoluminescence measurements the electronic states of silicon nanowires obtained by copper catalyzed chemical vapor deposition and compare them with those of wires made by etching silicon on the insulator structure. Thermal oxidation of nanowires appears to be absolutely necessary to passivate surface states and to enhance radiative recombinations at the silicon band gap. The study of the behavior of this transition as a function of temperature and pump power demonstrates that it involves the phonon assisted recombination of free carriers. The recombination energy appears at the silicon band gap, renormalized by exchange and correlation interactions favored by spatial confinement.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available