Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2993330
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Funding
- NSF [DMR-0507146, DMR-0820404]
- Department of Energy [DOE DE-FG02-07ER46417]
- Division of Materials Sciences and Engineering
- Office of Basic Energy Sciences
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Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180 degrees domain switching is closely related to the number of such local defects. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2993330]
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