Raman scattering studies on ZnO doped with Ga and N (codoping), and magnetic impurities

ZnO layers doped simultaneously with Ga and N (codoping), and magnetic elements (V, Co) were characterized by Raman scattering to study their structural stability. Five impurity modes were observed in range 200-900 cm(-1) in the doped samples, and showed characteristic variation with the doping level. It is shown that these modes can be used as a good measure of lattice defects induced by doping. The Raman spectra showed that the magnetic elements were incorporated up to 5 mol% without serious deterioration in crystallinity.