Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3020296
Keywords
bismuth compounds; dielectric hysteresis; dielectric thin films; doping; magnetic hysteresis; multiferroics; pulsed laser deposition; X-ray diffraction
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Funding
- National Key Basic Research and Development Program of China [2006CB932305]
- Natural Science Foundation of Hubei Province, China [2004ABA082]
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High-valence Pr-doped BiFeO3 (BPF) multiferroic thin film was prepared by pulsed laser deposition on a Pt/TiO2/SiO2/Si substrate. X-ray diffraction analysis indicates that the BPF film is of pure phase with a polycrystalline perovskite structure. The BPF film exhibited enhanced multiferroic properties: (i) a rectangular-shaped electric hysteresis loop with a large P-r of 75 mu C/cm(2) and a low E-c of 250 kV/cm at E-max similar to 620 kV/cm, (ii) a saturated magnetic hysteresis loop with a large M-s of 58 emu/cm(3), and (iii) a fatigue-free behavior after being subjected to 1.2x10(9) switching cycles, which were superior to, in some aspects, those of La- or Nd-doped BiFeO3 films reported before.
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