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APPLIED PHYSICS LETTERS
Volume 92, Issue 19, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.2927481
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Heavily alloyed, 100 nm Ga1-xMnxAs (x > 0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x > 0.1), while substitutional Mn content is proportional to x within a large window of growth conditions. (c) 2008 American Institute of Physics.
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