Related references
Note: Only part of the references are listed.Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
G. Jolley et al.
APPLIED PHYSICS LETTERS (2007)
Temperature-dependent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector
Xuejun Lu et al.
APPLIED PHYSICS LETTERS (2007)
Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony
P. Aivaliotis et al.
APPLIED PHYSICS LETTERS (2007)
Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector
R. S. Attaluri et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2007)
Temperature dependent responsivity of quantum dot infrared photodetectors
S. Y. Wang et al.
INFRARED PHYSICS & TECHNOLOGY (2007)
High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature
H. Lim et al.
APPLIED PHYSICS LETTERS (2007)
Demonstration of 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array
S. D. Gunapala et al.
INFRARED PHYSICS & TECHNOLOGY (2007)
Influence of Si doping on the performance of quantum dots-in-well photodetectors
R. S. Attaluri et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
Quantum dots-in-a-well infrared photodetectors
S Krishna
INFRARED PHYSICS & TECHNOLOGY (2005)
Quantum dot infrared photodetectors: Comparison of experiment and theory
H Lim et al.
PHYSICAL REVIEW B (2005)
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
P Bhattacharya et al.
APPLIED PHYSICS LETTERS (2005)
High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity
S Chakrabarti et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2004)
Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8-12 μm)
S Raghavan et al.
JOURNAL OF APPLIED PHYSICS (2004)
InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
SY Wang et al.
INFRARED PHYSICS & TECHNOLOGY (2003)
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
L Jiang et al.
APPLIED PHYSICS LETTERS (2003)
InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers
ZM Ye et al.
JOURNAL OF APPLIED PHYSICS (2002)
High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
S Raghavan et al.
APPLIED PHYSICS LETTERS (2002)
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
ZY Zhang et al.
JOURNAL OF APPLIED PHYSICS (2002)
Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells
ET Kim et al.
APPLIED PHYSICS LETTERS (2001)
Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
SY Wang et al.
APPLIED PHYSICS LETTERS (2001)