Growth and characterization of AlInN on AlN template

AlInN layers were directly grown on AlN/alpha-Al2O3 (0001) epitaxial templates by metalorganic vapor phase epitaxy. Indium incorporation coefficient was decreased with increasing the growth temperature. The crystalline quality and the composition of the grown films were strongly affected with the growth temperature and large compositional splitting was observed at 750 degreesC. Both photoluminescence and cathodoluminescence showed very complicated spectra in the photon-energy range of 2.4-4.3 eV, and the origin or these emissions were caused by a potential minima formed by compositional inhomogeneity. Absorption edge for the Al0.91In0.09N was larger than 4.3 eV. (C) 2004 Elsevier B.V. All rights reserved.