Optimizing the formation of nickel silicide

The formation processes for nickel silicide are assessed to determine limitations of using the silicide for sub-65 nanometer technologies. Various aspects of the NiSi formation process are described and addressed by using a two-step process sequence for annealing. This study focused on developing a process with three principal steps to achieve low resistivity NiSi films utilizing a low temperature isothermal cavity based furnace. Process parameters for a low resistivity NiSi film were determined for a two-step annealing sequence to enhance device electrical characteristics. Optimization of the initial anneal, combined with a second higher temperature stabilization anneal, reduced defect levels resulting in reduced device leakage. (C) 2004 Elsevier B.V. All rights reserved.