Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2892494
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Ge nanodots (NDs) for nonvolatile memories (NVMs) have been self-assembled at room temperature (RT) by ion beam sputtering deposition of ultrasmall amount Ge (< 72 ML) on SiO2 without postannealing. High-resolution transmission electron microscopy demonstrates the existence of well-defined Ge ND layers with respect to the SiO2/Si interface. As Ge amount increases, the size of NDs increases, while their density decreases. A possible mechanism is proposed to explain the formation of Ge NDs at RT based on simple model calculations. The memory window that is estimated by capacitance-voltage hysteresis increases up to 18.7 V with increasing Ge amount up to 54 ML. The program speed is enhanced by increasing Ge amount and the charge-loss speed in the programed state is slower for larger Ge amount. These NVM properties are very promising in view of device application. (c) 2008 American Institute of Physics.
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