Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3040319
Keywords
field effect transistors; heat treatment; hole mobility; nanotechnology; nickel compounds; organic compounds; thin film transistors
Categories
Funding
- NSFC/RGC [N_ HKU 742/04]
- University Development Fund [00600009]
- The University of Hong Kong
- Innovation Technology Fund (ITF)
- Strategic Theme on Organic Electronics
- RGC of HKSAR [7158/04E, 200807176003]
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We fabricated a field-effect transistor using micrometer-sized crystals (10-40 mu m) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15 +/- 0.03 cm(2) V(-1) s(-1), which is two orders of magnitude higher than that obtained with the thin film structure (1.1x10(-3) cm(2) V(-1) s(-1)).
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