Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3013566
Keywords
III-V semiconductors; indium compounds; nanotechnology; nanowires; semiconductor growth; vapour phase epitaxial growth
Categories
Funding
- National Science Foundation [ECS-0506902]
- Office of Naval Research [N000140-5-0149]
- Sharp Laboratories of America
Ask authors/readers for more resources
Vertical and electrically isolated InAs nanowires (NWs) are integrated with Si in a technique that bypasses structural defects and transport barriers at the Si-III-V NW interface. Smart-cut (R) technique is used to transfer a thin InAs layer onto SiO2/Si and is subsequently used for ordered organometallic vapor phase epitaxy of InAs NWs. The InAs layer in the regions between the InAs NWs is etched resulting in ordered, vertical, and electrically isolated InAs NW arrays. This transfer and fabrication technique enables heteroepitaxy of three dimensional III-V structures on Si and allows the realization of vertical devices with unprecedented control over their architectures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available