4.6 Article

Effect of structural anisotropy on electronic conduction in delafossite tin doped copper indium oxide thin films

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 19, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2982915

Keywords

carrier mobility; copper compounds; crystal orientation; doping; electrical conductivity; insulating thin films; sputter deposition; tin

Funding

  1. Council of Scientific and Industrial Research
  2. Department of Science and Technology, Government of India [SR/S2/CMP-40/2006]

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Sn doped CuInO2 thin films having a single delafossite phase have been synthesized by magnetron sputtering technique. A gradual decrease in the activation energy from 0.43 to about 0.10 eV and a large increase in conductivity are observed in Sn doped samples with increasing fraction of crystallites having (006) orientation due to an increase in substrate temperature. Due to thermally activated carrier transport along O-A-O layers and activated carrier generation along BO6 layers, crystallite orientation becomes a crucial factor in controlling the conduction in delafossite thin films.

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