4.6 Article

Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3013578

Keywords

chemical vapour deposition; dielectric materials; electrolytes; hydrogen; ion sensitive field effect transistors; organic semiconductors; silicon compounds; thin films

Funding

  1. National Research Agency (ANR) [ANR-05-BLAN0109-01]

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We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent pH response both in the acidic and alkaline pH range in a nearly all plastic technology.

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