Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3013578
Keywords
chemical vapour deposition; dielectric materials; electrolytes; hydrogen; ion sensitive field effect transistors; organic semiconductors; silicon compounds; thin films
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Funding
- National Research Agency (ANR) [ANR-05-BLAN0109-01]
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We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent pH response both in the acidic and alkaline pH range in a nearly all plastic technology.
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