Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 16, Issue 49, Pages 8937-8956Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/16/49/010
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We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films.
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