Journal
JOURNAL OF APPLIED PHYSICS
Volume 96, Issue 12, Pages 7500-7508Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1809268
Keywords
-
Categories
Ask authors/readers for more resources
The microchemical and microstructural origins of insulation-resistance degradation in BaTiO3-based capacitors are studied by complementary impedance spectroscopy and analytical transmission electron microscopy. The degradation under dc-field bias involves electromigration and accumulation of oxygen vacancies at interfaces. The nonstoichiometric BaTiO3-delta becomes locally more conducting through increased oxygen vacancy concentration and Ti ion reduction. The symmetry across the dielectric layer and locally across each grain is broken during the degradation process. Locally, the nonstoichiometry becomes so severe that metastable lattice structures are formed. The degradation in insulation resistance at the grain boundaries and electrode interfaces is associated with the double Schottky-barrier potential lowering and narrowing. This may correlate with an effective decrease in net acceptor charge density at the grain boundaries. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available