Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3013835
Keywords
ferroelectric thin films; MFIS structures; nanostructured materials; polymer blends; polymer films; random-access storage
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Funding
- Korea Science and Engineering Foundation [KOSEF-R11-2005-065]
- Korea Research Foundation International Academic Exchange Program [KRF-2006-D00021]
- Korea Ministry of Commerce, Industry and Energy
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We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (72/28 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100 nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric-metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.
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