Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2983743
Keywords
-
Categories
Ask authors/readers for more resources
The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (similar to 4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available