Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers

The search for materials tailored for spintronic devices led recently to the study of III-V diluted magnetic semiconductors (DMS). These materials are found to be closer to room-temperature ferromagnetism than their II-VI counterparts. Following this pathway, heterostructures based on III-V DMS were found to have higher Curie temperature. In this work, we propose geometrical arrangements that maximize spin separation combining strained and DMS III-V layers. (C) 2004 American Institute of Physics.