Related references
Note: Only part of the references are listed.Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer
Hyoung-Sub Kim et al.
APPLIED PHYSICS LETTERS (2006)
Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
Hyoung-Sub Kim et al.
APPLIED PHYSICS LETTERS (2006)
HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904
MM Frank et al.
APPLIED PHYSICS LETTERS (2005)
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
PD Ye et al.
APPLIED PHYSICS LETTERS (2004)
Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4-xO0.6/Ga2O3 gate dielectric stacks on GaAs
M Passlack et al.
APPLIED PHYSICS LETTERS (2003)
GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition
PD Ye et al.
APPLIED PHYSICS LETTERS (2003)
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
PD Ye et al.
IEEE ELECTRON DEVICE LETTERS (2003)