Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 26, Pages 6383-6385Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1840123
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InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [1 (3) over bar0] or [(3) over bar 10] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe/Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry. (C) 2004 American Institute of Physics.
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