Journal
ADVANCED MATERIALS
Volume 16, Issue 23-24, Pages 2151-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200400084
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Memory operations in polymer phototransistors have been demonstrated. A fraction of light-induced drain current in the depletion mode of a polythiophene-based field-effect transistor persists after switching off the photoexcitation, and can be erased by reversing the gate voltage (V-g) (see Figure). Write, store, read. and erase operations can be performed by applying a combination of gate voltages and incident light over a wide temperature range.
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