Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3049613
Keywords
carrier mobility; contact resistance; current distribution; field effect transistors; infrared imaging; interface states; organic compounds
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In this Letter, a lock-in thermography technique has been used to investigate the actual current distribution profile in the active channel region of organic field effect transistors. The high accuracy of the setup shows an evidence of nonuniformity in the current flow over the device area. The physical origin of this experimental occurrence is tentatively ascribed to a not uniform contact resistance distribution along the channel width or to inhomogeneities in the interface traps distribution. The subsequent implications on the carrier mobility evaluation are discussed too.
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