Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2968201
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The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along < 110 > directions. (C) 2008 American Institute of Physics.
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