4.6 Article

Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2975169

Keywords

-

Funding

  1. National Science Council in Taiwan [962221-E-009-218]
  2. ATU Program of Ministry of Education [96W803]

Ask authors/readers for more resources

The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available