4.6 Article

Reversible resistive switching behaviors in NiO nanowires

Related references

Note: Only part of the references are listed.
Article Physics, Applied

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

Gyeong-Su Park et al.

APPLIED PHYSICS LETTERS (2007)

Article Nanoscience & Nanotechnology

Preparation of open-through anodized aluminium oxide films with a clean method

Shiyong Zhao et al.

NANOTECHNOLOGY (2007)

Article Physics, Applied

Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides

Kentaro Kinoshita et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)

Article Physics, Applied

Improvement of resistive memory switching in NiO using IrO2

D. C. Kim et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

Reproducible resistance switching in polycrystalline NiO films

S Seo et al.

APPLIED PHYSICS LETTERS (2004)

Article Chemistry, Physical

Ordered nickel oxide nanowire arrays and their optical absorption properties

Y Lin et al.

CHEMICAL PHYSICS LETTERS (2003)