Related references
Note: Only part of the references are listed.MTJ elements with MgO barrier using RE-TM amorphous layers for perpendicular MRAM
T. Hatori et al.
IEEE TRANSACTIONS ON MAGNETICS (2007)
Comparison of the interfacial structure between MgO and Al-O oxidation layers for perpendicular magnetic tunnel junction
Tzu-Jung Chen et al.
JOURNAL OF APPLIED PHYSICS (2006)
Non-volatile magnetic random access memories (MRAM)
RC Sousa et al.
COMPTES RENDUS PHYSIQUE (2005)
Role of tunneling matrix elements in determining the magnitude of the tunneling spin polarization of 3d transition metal ferromagnetic alloys -: art. no. 247203
C Kaiser et al.
PHYSICAL REVIEW LETTERS (2005)
Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy
I Yoo et al.
JOURNAL OF APPLIED PHYSICS (2005)
Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers
D Lim et al.
JOURNAL OF APPLIED PHYSICS (2005)
70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers
DX Wang et al.
IEEE TRANSACTIONS ON MAGNETICS (2004)
Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
N Nishimura et al.
JOURNAL OF APPLIED PHYSICS (2002)
Magnetic properties of Co/Pt multilayers deposited on silicon dot arrays
S Landis et al.
PHYSICAL REVIEW B (2000)