Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3002300
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Funding
- National Research Laboratory Program [R0A-2005-000-10130-0]
- Ministry of Education, Science and Technology [2008-02981]
- Chungbuk National University
- National Research Foundation of Korea [2008-02981, R0A-2005-000-10130-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds similar to 31 kW/cm(2). (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3002300]
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