HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

In this letter, we present our experimental results of HfO2-based n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on indium phosphide (InP) substrates using a thin germanium (Ge) interfacial passivation layer (IPL). We found that MOSCAPs on n-InP substrates showed good C-V characteristics such as a small capacitance equivalent thickness (14 angstrom), a small frequency dispersion (< 10 % and <200 mV), and a low dielectric leakage current (similar to 5 X 10(-4) A/cm(2) at V-g = 1.5 V), whereas MOSCAPs on p-InP exhibited poor characteristics, implying severe Fermi level pinning. It was also found that InP was more vulnerable to a high temperature process such that C-V curves showed a characteristic bump and inversion capacitance at relatively high frequencies. From n-channel MOSFETs on a semi-insulating InP substrate using Ge IPL, HfO2, and TaN gate electrodes, excellent electrical characteristics such as a large transconductance (9.3 mS/mm) and large drain currents (12.3 mA/mm at V-d = 2 V and V-g = V-th + 2V) were achieved, which are comparable to other works. (C) 2008 American Institute of Physics.