4.4 Article

Effect of silylation on triethoxyfluorosilane xerogel films by means of atmospheric pressure drying

Journal

THIN SOLID FILMS
Volume 471, Issue 1-2, Pages 145-153

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2004.05.005

Keywords

low-k; dielectric

Ask authors/readers for more resources

Triethoxyfluorosilane-based (TEFS) xerogel films have been reacted with silylation agents and characterized. TEFS films have been employed because they form robust silica networks and exhibit low dielectric constants. However, these films readily absorb moisture. Employing silylation reactions enhances film hydrophobicity and permits possible introduction of this film as an interlayer dielectric material. Fourier transform infrared spectroscopy was used to verify the presence of methyl groups and extent of silylation in the silica films. Thicknesses anti refractive indices of the subject films were determined by ellipsometry studies, and porosity was determined by the refractive index, Hydrophobicity of the silica films was measured by the sessile-drop goniometric contact angle technique. (C) 2004 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available