Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 117, Issue 1, Pages 143-150Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2004.06.003
Keywords
fracture toughness; tensile test; single crystal silicon; fracture path
Ask authors/readers for more resources
In this work, we studied the effect of crystallographic orientation on fracture toughness and fracture paths of single crystal silicon film by a uniaxial tensile test. A focused ion beam (FIB) process was used to introduce a notch in the middle of silicon (110) and (001) film specimens that have different tensile orientations. The fracture toughness value varied from 1 to 2MPa m(1/2), depending on the tensile orientation. The scanning electron microscope (SEM) observations suggested that the inclination angle of the low index planes, {111} and {110}, relative to the specimen surface affects the fracture path significantly. The {111} and {110} planes were the preferred cleavage planes. (C) 2004 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available