Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2961003
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Funding
- MARCO Focus Center on Materials, Structures, and Devices
- National Institute of Standards and Technology, Semiconductor Electronics Division
- FUSION
- Korea Institute of Industrial Technology(KITECH) [10030694] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-357-D00155] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO2 and Al2O3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH4OH or (NH4)(2)S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH4)(2)S shows a decreased band bending and slightly thinner films with respect to NH4OH. (C) 2008 American Institute of Physics.
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