Related references
Note: Only part of the references are listed.Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
V. V. Afanas'ev et al.
JOURNAL OF APPLIED PHYSICS (2007)
Structural- : optical study of high-dielectric-constant oxide films
M. Losurdo et al.
APPLIED SURFACE SCIENCE (2006)
Band gap and band offsets for ultrathin (HfO2)x(SiO2)1-x dielectric films on Si(100)
H. Jin et al.
APPLIED PHYSICS LETTERS (2006)
Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films
JH Jun et al.
THIN SOLID FILMS (2006)
First-principles calculations of the electrical properties of LaAlO3 and its interface with Si -: art. no. 235329
AA Knizhnik et al.
PHYSICAL REVIEW B (2005)
Optical properties of La-based high-K dielectric films
E Cicerrella et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2005)
Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si(001) -: art. no. 201901
P Sivasubramani et al.
APPLIED PHYSICS LETTERS (2005)
Measurement of the band offsets between amorphous LaAlO3 and silicon
LF Edge et al.
APPLIED PHYSICS LETTERS (2004)
Band alignment between (100)Si and complex rare earth/transition metal oxides
VV Afanas'ev et al.
APPLIED PHYSICS LETTERS (2004)
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
LF Edge et al.
APPLIED PHYSICS LETTERS (2004)
Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition
BE Park et al.
APPLIED PHYSICS LETTERS (2003)
Band offsets and Schottky barrier heights of high dielectric constant oxides
PW Peacock et al.
JOURNAL OF APPLIED PHYSICS (2002)
Characterization of high-k gate dielectric/silicon interfaces
S Miyazaki
APPLIED SURFACE SCIENCE (2002)
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits
ML Green et al.
JOURNAL OF APPLIED PHYSICS (2001)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Stable zirconium silicate gate dielectrics deposited directly on silicon
GD Wilk et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
